GT1K2P15D5
Goford Semiconductor
TPH8R808QM,LQ
Part Number：
TPH8R808QM,LQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 80 V
- Package / Case 8-PowerTDFN
- Operating Temperature 175°C
- Vgs(th) (Max) @ Id 3.5V @ 300µA
- Supplier Device Package 8-SOP Advance (5x5.75)
- Current - Continuous Drain (Id) @ 25°C 79A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs 8.8mOhm @ 26A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 40 V
- Power Dissipation (Max) 3W (Ta), 109W (Tc)
