GT1K2P15D5
Goford Semiconductor
TPN2R304PL,L1Q
Part Number：
TPN2R304PL,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 40V 80A 8TSON
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drain to Source Voltage (Vdss) 40 V
- Package / Case 8-PowerVDFN
- Operating Temperature 175°C
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Rds On (Max) @ Id, Vgs 2.3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id 2.4V @ 300µA
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 20 V
- Power Dissipation (Max) 630mW (Ta), 104W (Tc)
