GT1K2P15D5
Goford Semiconductor
TSM052N06PQ56 RLG
Part Number：
TSM052N06PQ56 RLG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 60V 100A 8PDFN
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Vgs (Max) ±25V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Power Dissipation (Max) 83W (Tc)
- Rds On (Max) @ Id, Vgs 5.2mOhm @ 20A, 10V
- Package / Case 8-PowerTDFN
- Supplier Device Package 8-PDFN (5x6)
- Input Capacitance (Ciss) (Max) @ Vds 3686 pF @ 30 V
