GT1K2P15D5
Goford Semiconductor
TSM180N03PQ33 RGG
Part Number：
TSM180N03PQ33 RGG
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CH 30V 25A 8PDFN
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Package / Case 8-PowerVDFN
- Rds On (Max) @ Id, Vgs 18mOhm @ 12A, 10V
- Power Dissipation (Max) 21W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
- Supplier Device Package 8-PDFN (3.1x3.08)
