GT1K2P15D5
Goford Semiconductor
TSM4NB65CP
Part Number：
TSM4NB65CP
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
650V, 4A, SINGLE N-CHANNEL POWER
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Power Dissipation (Max) 50W (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-252 (DPAK)
- Rds On (Max) @ Id, Vgs 3.37Ohm @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs 13.46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 549 pF @ 25 V
