GT1K2P15D5
Goford Semiconductor
TSM600N25ECH C5G
Part Number：
TSM600N25ECH C5G
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CHANNEL 250V 8A TO251
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Operating Temperature 150°C (TJ)
- Drain to Source Voltage (Vdss) 250 V
- Vgs (Max) ±30V
- Power Dissipation (Max) 52W (Tc)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-251 (IPAK)
- Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V
- Rds On (Max) @ Id, Vgs 600mOhm @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 25 V
