GT1K2P15D5
Goford Semiconductor
TSM60NB380CH
Part Number：
TSM60NB380CH
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
600V, 9.5A, SINGLE N-CHANNEL POW
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
- Power Dissipation (Max) 83W (Tc)
- Supplier Device Package TO-251 (IPAK)
- Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
- Rds On (Max) @ Id, Vgs 380mOhm @ 2.85A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 795 pF @ 100 V
