GT1K2P15D5
Goford Semiconductor
TSM60NE180CIT C0G
Part Number：
TSM60NE180CIT C0G
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
600V, 13A, SINGLE N-CHANNEL HIGH
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Package / Case TO-220-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Power Dissipation (Max) 63W (Tc)
- Vgs (Max) ±30V
- Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
- Vgs(th) (Max) @ Id 6V @ 1.8mA
- Supplier Device Package ITO-220TL
- Rds On (Max) @ Id, Vgs 165mOhm @ 4.3A, 12V
- Input Capacitance (Ciss) (Max) @ Vds 1417 pF @ 300 V
