GT1K2P15D5
Goford Semiconductor
TSM70N900CI
Part Number：
TSM70N900CI
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
700V, 4.5A, SINGLE N-CHANNEL POW
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
- Power Dissipation (Max) 20W (Tc)
- Package / Case TO-220-3 Full Pack, Isolated Tab
- Vgs (Max) ±30V
- Rds On (Max) @ Id, Vgs 900mOhm @ 1.5A, 10V
- Drain to Source Voltage (Vdss) 700 V
- Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 482 pF @ 100 V
- Supplier Device Package ITO-220
