GT1K2P15D5
Goford Semiconductor
TSM900N06CH X0G
Part Number：
TSM900N06CH X0G
Category：
Single FETs, MOSFETs
Manufacturer：
Taiwan Semiconductor Corporation
Description：
MOSFET N-CHANNEL 60V 11A TO251
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 25W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 15 V
- Supplier Device Package TO-251 (IPAK)
- Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
- Package / Case TO-251-3 Stub Leads, IPAK
- Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 10V
