GT1K2P15D5
Goford Semiconductor
TW060Z120C,S1F
Part Number：
TW060Z120C,S1F
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
G3 1200V SIC-MOSFET TO-247-4L 6
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Power Dissipation (Max) 170W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Operating Temperature 175°C
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 18 V
- Vgs(th) (Max) @ Id 5V @ 4.2mA
- Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 800 V
- Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 18V
- Supplier Device Package TO-247-4L(X)
