GT1K2P15D5
Goford Semiconductor
TW070J120B,S1Q
Part Number：
TW070J120B,S1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
SICFET N-CH 1200V 36A TO3P
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-3P-3, SC-65-3
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Operating Temperature -55°C ~ 175°C
- Drain to Source Voltage (Vdss) 1200 V
- Supplier Device Package TO-3P(N)
- Power Dissipation (Max) 272W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V
- Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 20V
- Vgs(th) (Max) @ Id 5.8V @ 20mA
- Vgs (Max) ±25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 800 V
