GT1K2P15D5
Goford Semiconductor
VP0106N3-G
Part Number：
VP0106N3-G
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET P-CH 60V 250MA TO92-3
Packaging：
Bag
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-92-3
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Vgs(th) (Max) @ Id 3.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
- Power Dissipation (Max) 1W (Tc)
- Current - Continuous Drain (Id) @ 25°C 250mA (Tj)
- Rds On (Max) @ Id, Vgs 8Ohm @ 500mA, 10V
