GT1K2P15D5
Goford Semiconductor
XP10TN135H
Part Number：
XP10TN135H
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 100V 8.1A TO252
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 8.1A (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252
- Gate Charge (Qg) (Max) @ Vgs 17.6 nC @ 10 V
- Rds On (Max) @ Id, Vgs 135mOhm @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 928 pF @ 50 V
- Power Dissipation (Max) 2W (Ta), 20.8W (Tc)
