GT1K2P15D5
Goford Semiconductor
XP60SA290DH
Part Number：
XP60SA290DH
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 600V 13.3A TO252
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-252
- Rds On (Max) @ Id, Vgs 290mOhm @ 5.8A, 10V
- Power Dissipation (Max) 2W (Ta), 104W (Tc)
- Current - Continuous Drain (Id) @ 25°C 13.3A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1632 pF @ 100 V
