GT1K2P15D5
Goford Semiconductor
XP6N090N
Part Number：
XP6N090N
Category：
Single FETs, MOSFETs
Manufacturer：
YAGEO XSemi
Description：
MOSFET N-CH 60V 2.5A SOT23
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 15 V
- Power Dissipation (Max) 1.25W (Ta)
- Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 10V
- Supplier Device Package SOT-23
