GT1K2P15D5
Goford Semiconductor
XPH2R106NC,L1XHQ
Part Number：
XPH2R106NC,L1XHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 60V 110A 8SOP
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Package / Case 8-PowerVDFN
- Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
- Supplier Device Package 8-SOP Advance (5x5)
- Operating Temperature 175°C
- Current - Continuous Drain (Id) @ 25°C 110A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 10 V
- Power Dissipation (Max) 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs 2.1mOhm @ 55A, 10V
