GT1K2P15D5
Goford Semiconductor
XPJR6604PB,LXHQ
Part Number：
XPJR6604PB,LXHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
40V; UMOS9; 0.66MOHM; S-TOGL
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Vgs(th) (Max) @ Id 3V @ 1mA
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
- Power Dissipation (Max) 375W (Tc)
- Operating Temperature 175°C
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- Package / Case 5-PowerSFN
- Rds On (Max) @ Id, Vgs 0.66mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 11380 pF @ 10 V
- Supplier Device Package S-TOGL™
