GT1K2P15D5
Goford Semiconductor
XPN12006NC,L1XHQ
Part Number：
XPN12006NC,L1XHQ
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Semiconductor and Storage
Description：
MOSFET N-CH 60V 20A 8TSON
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Operating Temperature -55°C ~ 175°C
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
- Power Dissipation (Max) 65W (Tc)
- Package / Case 8-PowerVDFN
- Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V
- Current - Continuous Drain (Id) @ 25°C 20A
- Vgs(th) (Max) @ Id 2.5V @ 200µA
- Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
